EUR 0,00
(toimituskulut: 0,00)
Infineon FM24CL16B-G
Tuotenumero: [20578620] | Valmistaja: Infineon | Mallinum: FM24CL16B-G | EAN: 2050009802615
Etävarastossa
Tuotetta on etävarastossamme, toimitusaika noin 7-9 työpäivää. Lisätietoja
Toimitusvaihtoehdot - Valitaan kassalla
Budbee Laatikko - Nouda valitsemastasi laatikosta!
7,02
Bring - Toimitus huoltopisteeseen
7,02
Bring - Kotiinkuljetus -arkisin.
10,03
Toimituskulut on laskettu vastaanottajan postinumeron perusteella:00180 - Helsinki Vaihda postinumero
Syötä postinumero toimitusta varten:
EUR
2,86
ilman ALV 2,28
Kokonaishinta sis. toimitus
9,88
Tämä toiminto vaatii sisäänkirjautumisen. Luo käyttäjä ja voit käyttää listojamme esim. säännöllisiä ostoksia ja toivelistoja varten
Luo käyttäjä
Kirjaudu
Luo käyttäjä
Kirjaudu
Send på mail
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.